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MPC7410EC Datasheet(PDF) 7 Page - NXP Semiconductors |
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MPC7410EC Datasheet(HTML) 7 Page - NXP Semiconductors |
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7 / 56 page ![]() MPC7410 RISC Microprocessor Hardware Specifications, Rev. 6.1 Freescale Semiconductor 7 General Parameters 3 General Parameters The following list provides a summary of the general parameters of the MPC7410: Technology 0.18 µm CMOS, six-layer metal Die size 6.32 mm × 8.26 mm (52 mm2) Transistor count 10.5 million Logic design Fully static Packages Surface mount 360 ceramic ball grid array (CBGA) Surface mount 360 high coefficient of thermal expansion ceramic ball grid array (HCTE_CBGA) Surface mount 360 high coefficient of thermal expansion ceramic ball grid array with lead free C5 spheres (HCTE_CBGA Lead Free C5 Spheres) Surface mount 360 high coefficient of thermal expansion ceramic land grid array (HCTE_LGA) Core power supply 1.8 V ± 100 mV DC (nominal; see Table 3 for recommended operating conditions) I/O power supply 1.8 V ± 100 mV DC or 2.5 V ± 100 mV 3.3 V ± 165 mV (system bus only) (input thresholds are configuration pin selectable) 4 Electrical and Thermal Characteristics This section provides the AC and DC electrical specifications and thermal characteristics for the MPC7410. 4.1 DC Electrical Characteristics The tables in this section describe the MPC7410 DC electrical characteristics. Table 1 provides the absolute maximum ratings. Table 1. Absolute Maximum Ratings 1 Characteristic Symbol Maximum Value Unit Notes Core supply voltage VDD –0.3 to 2.1 V 4 PLL supply voltage AVDD –0.3 to 2.1 V 4 L2 DLL supply voltage L2AVDD –0.3 to 2.1 V 4 Processor bus supply voltage OVDD –0.3 to 3.6 V 3, 6 L2 bus supply voltage L2OVDD –0.3 to 2.8 V 3 Input voltage Processor bus Vin –0.3 to OVDD + 0.2 V V 2, 5 L2 bus Vin –0.3 to L2OVDD + 0.2 V V 2, 5 JTAG signals Vin –0.3 to OVDD + 0.2 V V — Storage temperature range Tstg –55 to 150 °C — |
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