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MPC7410EC Datasheet(PDF) 7 Page - NXP Semiconductors

No. de pieza MPC7410EC
Descripción Electrónicos  MPC7410 RISC Microprocessor Hardware Specifications
PDF  56 Pages
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Fabricante Electrónico  NXP [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo NXP - NXP Semiconductors

MPC7410EC Datasheet(HTML) 7 Page - NXP Semiconductors

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MPC7410 RISC Microprocessor Hardware Specifications, Rev. 6.1
Freescale Semiconductor
7
General Parameters
3
General Parameters
The following list provides a summary of the general parameters of the MPC7410:
Technology
0.18 µm CMOS, six-layer metal
Die size
6.32 mm
× 8.26 mm (52 mm2)
Transistor count
10.5 million
Logic design
Fully static
Packages
Surface mount 360 ceramic ball grid array (CBGA)
Surface mount 360 high coefficient of thermal expansion ceramic ball grid array
(HCTE_CBGA)
Surface mount 360 high coefficient of thermal expansion ceramic ball grid array with
lead free C5 spheres (HCTE_CBGA Lead Free C5 Spheres)
Surface mount 360 high coefficient of thermal expansion ceramic land grid array
(HCTE_LGA)
Core power supply 1.8 V ± 100 mV DC (nominal; see Table 3 for recommended operating conditions)
I/O power supply
1.8 V ± 100 mV DC or
2.5 V ± 100 mV
3.3 V ± 165 mV (system bus only)
(input thresholds are configuration pin selectable)
4
Electrical and Thermal Characteristics
This section provides the AC and DC electrical specifications and thermal characteristics for the MPC7410.
4.1 DC Electrical Characteristics
The tables in this section describe the MPC7410 DC electrical characteristics. Table 1 provides the absolute
maximum ratings.
Table 1. Absolute Maximum Ratings 1
Characteristic
Symbol
Maximum Value
Unit
Notes
Core supply voltage
VDD
–0.3 to 2.1
V
4
PLL supply voltage
AVDD
–0.3 to 2.1
V
4
L2 DLL supply voltage
L2AVDD
–0.3 to 2.1
V
4
Processor bus supply voltage
OVDD
–0.3 to 3.6
V
3, 6
L2 bus supply voltage
L2OVDD
–0.3 to 2.8
V
3
Input voltage
Processor bus
Vin
–0.3 to OVDD + 0.2 V
V
2, 5
L2 bus
Vin
–0.3 to L2OVDD + 0.2 V
V
2, 5
JTAG signals
Vin
–0.3 to OVDD + 0.2 V
V
Storage temperature range
Tstg
–55 to 150
°C



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