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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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3DA77 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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3DA77 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 3DA77 DESCRIPTION · High DC Current Gain : hFE= 10(MAX)@IC= 1.5A · Excellent Safe Operating Area · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use as an output device in complementary audio amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 1 V IC Collector Current-Continuous 5.0 A PC Collector Power Dissipation@TC=75℃ 40 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -55-175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃ /W |
Número de pieza similar - 3DA77 |
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Descripción similar - 3DA77 |
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