BLS7G3135L-350P_7G3135LS-350P#4

All information provided in this document is subject to legal disclaimers.

© Ampleon The Netherlands B.V. 2015. All rights reserved.

Product data sheet

Rev. 4 — 1 September 2015

4 of 13

BLS7G3135L(S)-350P

LDMOS S-band radar power transistor

7. Application information

7.1 Ruggedness in class-AB operation

The BLS7G3135L-350P and the BLS7G3135LS-350P are capable of withstanding a load

mismatch corresponding to VSWR = 10 : 1 through all phases under the following

Table 7.

RF characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

At frequency of 3.1 GHz

power gain

10.5

12

-

dB

input return loss

-

6-

dB

drain efficiency

38

43

-

%

pulse droop power

-

0.2

0.3

dB

rise time

-

5

50

ns

fall time

-

5

50

ns

At frequency of 3.3 GHz

power gain

10.5

12

-

dB

input return loss

-

6-

dB

drain efficiency

38

43

-

%

pulse droop power

-

0.2

0.3

dB

rise time

-

5

50

ns

fall time

-

5

50

ns

At frequency of 3.5 GHz

power gain

8.5

10

-

dB

input return loss

-

9-

dB

drain efficiency

35

39

-

%

pulse droop power

-

0.2

0.3

dB

rise time

-

5

50

ns

fall time

-

5

50

ns