BLC2425M10LS250

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© Ampleon Netherlands B.V. 2019. All rights reserved.

Product data sheet

Rev. 3 — 19 April 2019

4 of 11

BLC2425M10LS250

Power LDMOS transistor

7.3 Test circuit

Fig 1.

Definition of transistor impedance

001aag189

drain

gate

Printed-Circuit Board (PCB): Rogers TC350; thickness = 0.762 mm;

thickness copper plating = 35

μm.

See Table 9 for a list of components.

Fig 2.

Component layout for production test circuit

Table 9.

List of components

See Figure 2 for component layout.

Component Description

Value

Remarks

C1, C2

multilayer ceramic chip capacitor

22 pF

ATC 800A

C3, C9, C10 multilayer ceramic chip capacitor

1000 pF, 50 V

C0805

C4

multilayer ceramic chip capacitor

1

μF, 50 V

C1206

C5, C6, C13 multilayer ceramic chip capacitor

22 pF

ATC 800B

C7, C8

multilayer ceramic chip capacitor

560 pF

ATC 100B

C11, C12

multilayer ceramic chip capacitor

4.7

μF, 50 V

C1210

C14, C15

electrolytic capacitor

100

μF, 63 V

C16

electrolytic capacitor

22

μF, 63 V

L1, L2

inductor

79 nH, 17.8 A [1] 1010VS-79NMEB

Q1

LDMOS transistor

BLC2425M10LS250

amp00563

60 mm

40 mm

R1

C2

C3

C4

C1

40 mm

Q1

C13

Rx

R2

C12

C11

C10

C9

C8

C7

C6

C5

R3

C14

C15

C16