BLF578

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© Ampleon Netherlands B.V. 2016. All rights reserved.

Product data sheet

Rev. 4 — 1 December 2016

11 of 14

BLF578

Power LDMOS transistor

10. Handling information

[1]

HBM classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000 V, but fails

after exposure to an ESD pulse of 4000 V.

11. Abbreviations

12. Revision history

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

Table 10.

ESD sensitivity

ESD model

Class

Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001

2 [1]

Table 11.

Abbreviations

Acronym

Description

CW

Continuous Wave

EDGE

Enhanced Data rates for GSM Evolution

GSM

Global System for Mobile communications

HF

High Frequency

LDMOS

Laterally Diffused Metal-Oxide Semiconductor

LDMOST

Laterally Diffused Metal-Oxide Semiconductor Transistor

RF

Radio Frequency

TTF

Time To Failure

VSWR

Voltage Standing-Wave Ratio

Table 12.

Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

BLF578 v.4

20161201

Product data sheet

-

BLF578_3

Modifications:

• Section 10 on page 11: updated Handling information

BLF578_3

20150901

Product data sheet

-

BLF578_2

BLF578_2

20100204

Product data sheet

-

BLF578_1

BLF578_1

20081211

Objective data sheet

-

-