ACE12410BMN+H datasheet(3/7 Pages) ACE

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ACE12410B

N-Channel Enhancement Mode Field Effect Transistor

VER 1.2

Electrical Characteristics TA=25 OC unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=250uA

Zero Gate Voltage Drain Current

IDSS

VDS=20V, VGS=0V

µA

Gate Threshold Voltage

VGS(th)

VDS=VGS, IDS=250uA

0.4

0.7

Gate Leakage Current

IGSS

VGS=±10V, VDS=0V

±10

µA

Static Drain-Source On-Resistance

RDS(ON)

VGS=4.5V, ID=8A

10.5

VGS=2.5V, ID=4A

Diode Forward Voltage

VSD

ISD=1A, VGS=0V

0.75

Diode Forward Current*AB

TA =25°C

3.7

Switching

Total Gate Charge

VDS=10V, ID=8A

VGS=4.5V

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

2.4

Turn-On Delay Time

Td(on)

VGS=4.5V, VDS=10V

RL=1.25

Ω, R

GEN=3

Turn-On Rise Time

4.5

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Dynamic

Input Capacitance

Ciss

VDS=10V, VGS=0V

f=1.0MHz

790

Output Capacitance

Coss

164

Reverse Transfer Capacitance

Crss

103

A: The value of R

θJA

is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

environment with T

=25°C. The value in any given application depends on the user's specific board design.

: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating, package limited 8A.

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