ACE14435B datasheet(1/2 Pages) ACE

No. de pieza	ACE14435B

Descripción Electrónicos	P-Channel Enhancement Mode Power MOSFET

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Fabricante Electrónico	ACE [ACE Technology Co., LTD.]

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ACE14435B

P-Channel Enhancement Mode Power MOSFET

VER 1.1

1

Description

⚫

Backlighting

⚫

Power Management Functions

⚫

DC-DC Converters

Features

⚫

VDS =-30V

⚫

ID = -24A

⚫

RDS(ON) @ VGS = -4.5V, TYP 24mΩ

⚫

RDS(ON) @ VGS = -2.5V, TYP 32mΩ

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

-30

V

Gate-Source Voltage

VGSS

±20

V

Drain Current (Continuous) *AC

TA=25℃

ID

-24

A

TA=70℃

-19.4

Drain Current (Pulsed) *B

IDM

-96

A

Power Dissipation

TA=25℃

PD

27.8

W

Operating temperature / storage temperature

TJ/TSTG

-55~150

℃

A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still

air environment with TA=25°C. The value in any given application depends on the user's specific board

design.

B: Repetitive rating, pulse width limited by junction temperature.

C:

The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

Thermal Resistance Ratings

Parameter

Symbol

Typical

Maximum

Units

Maximum Junction-to-Ambient

t ≤ 10s

R

thJA

29

36

°C/W

Maximum Junction-to-Case (Drain)

Steady State

R

thJC

3.6

4.5

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ACE14435B Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

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