TF7409B datasheet(1/6 Pages) TUOFENG

No. de pieza	TF7409B

Descripción Electrónicos	P-Channel Enhancement Mode Power MOSFET

PDF	6 Pages

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Fabricante Electrónico	TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]

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V 1. 0

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PDFN 3x3 Plastic-Encapsulate MOSFET

S

Description

The TF7409B uses advanced trench technology to

provide excellent RDS(ON), low gate charge and operation

with gate voltages as low as 4.5V.

General Features

●

VDS = -30V,ID = -25A

RDS(ON) < 30mΩ @ VGS=-4.5V

RDS(ON) < 17mΩ @ VGS=-10V

●

High power and current handing capability

●

Lead free product is acquired

●

Surface mount package

Application

●

Battery Switch

●

Load switch

●

Power management

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

-30

V

Gate-Source Voltage

VGS

±20

V

TA =25℃

-10

Continuous Drain Current (TJ =150℃)

TA =70℃

ID

-8.0

A

Drain Current-Pulsed

(Note 1)

IDM

-45

A

Maximum Power Dissipation

PD

3.1

W

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

℃

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient

(Note 2)

RθJA

40

/W

℃

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

www.sztuofeng.com

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8

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Equivalent Cir cuit

MARKING

Y :year code W :week code

PDFN3X3-8L

TF

7409B

CYWP

S

G

D

P-Channel Enhancement Mode Power MOSFET

ＴＦ７４０９Ｂ

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TF7409B Datasheet(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co

TF7409B Datasheet(HTML) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co

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