APEX MICROTECHNOLOGY CORPORATION • 5980 NORTH SHANNON ROAD • TUCSON, ARIZONA 85741 • USA • APPLICATIONS HOTLINE: 1 (800) 546-2739

2

PARAMETER

MIN

TYP

MAX

UNITS

INPUT

ANALOG INPUT VOLTAGES

Vcc = 12V

A, B OUT = 50% Duty Cycle

1/2VCC

Vdc

A OUT = 100% Duty Cycle High

1/3VCC

Vdc

B OUT = 100% Duty Cycle High

2/3VCC

Vdc

PWM INPUT

PWM PULSE LOW VOLTAGE

0

0.8

Vdc

PWM PULSE HIGH VOLTAGE

2.7

5.0

Vdc

PWM FREQUENCY

45

250

KHz

DISABLE ON

2.7

Vcc

Vdc

DISABLE OFF

0

0.8

Vdc

OUTPUT

Vds (ON) VOLTAGE, each MOSFET

Ids = 10A

1.7

2.5

Vdc

TOTAL Ron, both MOSFETs

.45

Ω

EFFICIENCY, 10A OUTPUT

+V

91

%

CURRENT, continuous

10

A

CURRENT, peak

t = 100 msec

15

A

SWITCHING FREQUENCY

Cf = 270 pf

45

KHz

DEAD TIME

90

nS

POWER SUPPLY

+V

4

+V

80

Vdc

Vcc VOLTAGE

9.5

12

15

Vdc

Vcc CURRENT

Vcc = 12Vdc

28

36

mA

+V

Switching, no load, V

5

mA

RESISTANCE, junction to case

Full temp range, for each transistor

1.6

°C/W

RESISTANCE, junction to air

Full temperature range

30

°C/W

TEMPERATURE RANGE, case

–25

+85

°C

ABSOLUTE MAXIMUM RATINGS

SPECIFICATIONS

ABSOLUTE MAXIMUM RATINGS

SUPPLY VOLTAGE, +V

S

OUTPUT CURRENT, peak

15A

LOGIC SUPPLY VOLTAGE, Vcc

16V

POWER DISSIPATION, internal

TEMPERATURE, pin solder - 10s max.

260°C

150°C

TEMPERATURE RANGE, storage

–40 to +85°C

OPERATING TEMPERATURE RANGE, case

–25 to +85°C

SA60

SPECIFICATIONS

The SA60 is constructed from MOSFET transistors. ESD handling procedures must be observed.

The exposed substrate contains beryllia (BeO). Do not crush, machine, or subject to temperatures in excess of 850°C to

avoid generating toxic fumes.

CAUTION

NOTES: 1. Each of the two active output transistors can dissipate 78W.

2. Unless otherwise noted: T

3. Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation to

achieve high MTTF. For guidance, refer to the heatsink data sheet.

4. Derate to 70V below T