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IRFP064 Datasheet(PDF) 1 Page - Vishay Siliconix |
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IRFP064 Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 11 page ![]() IRFP064 www.vishay.com Vishay Siliconix S22-0045-Rev. D, 24-Jan-2022 1 Document Number: 91201 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Ultra low on-resistance • Very low thermal resistance • Isolated central mounting hole • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 25 V, starting TJ = 25 °C, L = 69 μH, Rg = 25 Ω, IAS = 130 A (see fig. 12) c. ISD ≤ 130 A, dI/dt ≤ 300 A/μs, VDD ≤ VDS, TJ ≤ 175 °C d. 1.6 mm from case e. Current limited by the package (die current = 130 A) PRODUCT SUMMARY VDS (V) 60 RDS(on) ( Ω)VGS = 10 V 0.009 Qg (max.) (nC) 190 Qgs (nC) 55 Qgd (nC) 90 Configuration Single N-Channel MOSFET G D S TO-247AC G D S Available Available ORDERING INFORMATION Package TO-247AC Lead (Pb)-free IRFP064PbF ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-source voltage VDS 60 V Gate-source voltage VGS ± 20 Continuous drain current e VGS at 10 V TC = 25 °C ID 70 A Continuous drain current TC = 100 °C 70 Pulsed drain current a IDM 520 Linear derating factor 2.0 W/°C Single pulse avalanche energy b EAS 1000 mJ Repetitive avalanche current a IAR 70 A Repetitive avalanche energy a EAR 30 mJ Maximum Power Dissipation TC = 25 °C PD 300 W Peak Diode Recovery dV/dt c dV/dt 4.5 V/ns Operating Junction and Storage Temperature TJ, Tstg -55 to +175 °C Soldering Recommendations (Peak Temperature) for 10 s 300 Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m |
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