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IRFP064 Datasheet(PDF) 1 Page - Vishay Siliconix

No. de pieza IRFP064
Descripción Electrónicos  Power MOSFET
PDF  11 Pages
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IRFP064 Datasheet(HTML) 1 Page - Vishay Siliconix

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IRFP064
www.vishay.com
Vishay Siliconix
S22-0045-Rev. D, 24-Jan-2022
1
Document Number: 91201
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
FEATURES
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Ultra low on-resistance
• Very low thermal resistance
• Isolated central mounting hole
• 175 °C operating temperature
• Fast switching
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
device
design,
low
on-resistance
and
cost-effectiveness.
The
TO-247AC
package
is
preferred
for
commercial-industrial applications where higher power
levels preclude the use of TO-220AB devices. The
TO-247AC is similar but superior to the earlier TO-218
package because its isolated mounting hole. It also provides
greater creepage distances between pins to meet the
requirements of most safety specifications.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 25 V, starting TJ = 25 °C, L = 69 μH, Rg = 25
Ω, IAS = 130 A (see fig. 12)
c. ISD
≤ 130 A, dI/dt ≤ 300 A/μs, VDD ≤ VDS, TJ ≤ 175 °C
d. 1.6 mm from case
e. Current limited by the package (die current = 130 A)
PRODUCT SUMMARY
VDS (V)
60
RDS(on) (
Ω)VGS = 10 V
0.009
Qg (max.) (nC)
190
Qgs (nC)
55
Qgd (nC)
90
Configuration
Single
N-Channel MOSFET
G
D
S
TO-247AC
G
D
S
Available
Available
ORDERING INFORMATION
Package
TO-247AC
Lead (Pb)-free
IRFP064PbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-source voltage
VDS
60
V
Gate-source voltage
VGS
± 20
Continuous drain current e
VGS at 10 V
TC = 25 °C
ID
70
A
Continuous drain current
TC = 100 °C
70
Pulsed drain current a
IDM
520
Linear derating factor
2.0
W/°C
Single pulse avalanche energy b
EAS
1000
mJ
Repetitive avalanche current a
IAR
70
A
Repetitive avalanche energy a
EAR
30
mJ
Maximum Power Dissipation
TC = 25 °C
PD
300
W
Peak Diode Recovery dV/dt c
dV/dt
4.5
V/ns
Operating Junction and Storage Temperature
TJ, Tstg
-55 to +175
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300
Mounting Torque
6-32 or M3 screw
10
lbf · in
1.1
N · m


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