TSM032NH04LCR datasheet(4/7 Pages) TSC

No. de pieza	TSM032NH04LCR

Descripción Electrónicos	Power Transistor

PDF	7 Pages

Scroll/Zoom	100%

Fabricante Electrónico	TSC [Taiwan Semiconductor Company, Ltd]

Página de inicio	http://www.taiwansemi.com

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TSM032NH04LCR

Taiwan Semiconductor

Version: D2207

CHARACTERISTICS CURVES

(TA = 25°C unless otherwise noted)

Capacitance vs. Drain-Source Voltage

BVDSS vs. Junction Temperature

Maximum Safe Operating Area, Junction-to-Case

Source-Drain Diode Forward Current vs. Voltage

Normalized Thermal Transient Impedance, Junction-to-Case

t, Square Wave Pulse Duration (sec)

VDS, Drain to Source Voltage (V)

TJ, Junction Temperature (°C)

VSD, Body Diode Forward Voltage (V)

VDS, Drain to Source Voltage (V)

100

1000

10000

GS = 0V

f = 1MHz

Ciss

Coss

Crss

0.90

0.95

1.00

1.05

1.10

-75

-50

-25

100 125 150 175

D=1mA

0.1

1.0

10.0

100.0

0.2

0.4

0.6

0.8

1.2

-55

°C

175

°C

0.01

0.1

0.0001

0.001

0.01

0.1

SINGLE PULSE

RӨJC=1.3°C/W

Duty=0.5

Duty=0.2

Duty=0.1

Duty=0.05

Duty=0.02

Duty=0.01

Single

Notes:

Duty = t

1 / t2

J = TC + PDM x Z

ӨJC x RӨJC

0.1

100

1000

0.1

100

DS(ON)

SINGLE PULSE

RӨJC=1.3°C/W

C=25°C

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