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LSUBT-SWS Datasheet(PDF) 1 Page - Vishay Siliconix |
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LSUBT-SWS Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 4 page ![]() www.vishay.com For technical questions, contact: efi@vishay.com Document Number: 61086 1 Revision: 19-Jan-10 LSUB Vishay Electro-Films Ceramic Submount for High Power LED The LSUB series substrates are ceramic LED package bases designed to provide thermal management for high power (> 1 W) LED devices; the LSUB is designed to minimize the thermal resistance between the die junction and the package termination. The LSUB’s enhanced thermal management enables a lower junction temperature and increased efficiency and reliability compared to other technologies. In addition to the increased brightness, the lower junction temperature results in better color uniformity. The LSUB is available in two configurations; in the standard configuration the LED die is mounted directly over filled vias and an offset version where the filled via is located to the side of the die pad. The standard configuration is designed for the attach methods including conductive epoxies and thick solders (greater than 12 µm) while the offset configuration is designed for thin eutectic solder layers in the 2 µm to 3 µm range. An additional benefit of the standard configuration is the pad size is large enough to accommodate a parallel diode for ESD protection. The LSUB is available singulated as individual die or in square arrays. Additional LED configurations and form factors available upon reques. FEATURES • Ultra-low thermal resistance • Eutectic or epoxy LED die attach pads • Surface-mounted component assembly APPLICATIONS • High power LED for automotive, industrial and home applications • High power laser diodes for industrial applications Note (1) Thermal resistance between die pad and package termination (anode) GENERAL SPECIFICATIONS Substrate Material Alumina 99.6 %, Alumina 96 % or AlN Conductor Material Copper Conductor Thickness 5 µm ± 10 % Substrate Thickness 25 mil (0.635 mm) LED Die Size 40 mil x 40 mil (1 mm x 1 mm) Operating Temperature (°C) - 55 to + 125 Storage Temperature (°C) - 55 to + 125 Die Bond Pad Metallization Ni/Au or 80 %/20 % AuSn over Ni/Au TYPICAL THERMAL RESISTANCE (1) (K/W) SUBSTRATE STANDARD OFFSET AlN 35 Alumina (99.6 %) 68 Alumina (96 %) 10 12 |
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