1

Edition 1.1

August 2004

FHX76LP

Super Low Noise HEMT

DESCRIPTION

The FHX76LP is a low noise SuperHEMT

applications. This device uses a small ceramic package that is optimized

for high volume cost driven requirements.

Eudyna’s stringent Quality Assurance Program assures the highest

reliability and consistent performance.

FEATURES

• Low Noise Figure: NF=0.40dB (Typ.)@f=12GHz

• High Associated Gain: Gas=13.5dB (Typ.)@f=12GHz

• High Reliability

• Small Size SMT Package

• Tape and Reel Packaging Available

Parameter

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

Symbol

V

V

mW

°C

°C

VGS

Pt

TSTG

TCH

VDS

Rating

Condition

Unit

3.5

-3.0

180

Note

-65 to 150

150

ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 25

°C)

Note: Mounted on Al2O3 board (30 x 30 x 0.65mm)

Eudyna recommends the following conditions for the reliable operation of GaAs FETs:

1. The drain-source operating voltage (VDS) should not exceed 2 volts.

2. The forward and reverse gate currents should not exceed 0.2 and -0.05 mA respectively with

gate resistance of 4000

Ω.

3. The operating channel temperature (Tch) should not exceed 80°C.

Item

Saturated Drain Current

Transconductance

Pinch-Off Voltage

Gate-Source Breakdown Voltage

Noise Figure

Associated Gain

Symbol

35

50

-

10

30

60

-0.1

-0.7

-1.5

-3.0

-

-

-

0.40

0.50

12.0

13.5

-

f=12GHz

mA

mS

V

dB

dB

V

gm

NF

Conditions

Unit

Limits

Typ.

Max.

Min.

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25

°C)

Note: RF parameters for LP devices are measured on a sample basis as follows:

Lot qty.

Sample qty.

Accept/Reject

1200

or

less

125

(0,1)

1201

to

3200

200

(0,1)

3201

to

10000

315

(1,2)

10001

or

over

500

(1,2)

CASE STYLES: LP

Channel to Case

Thermal Resistance

-

300

400

°C/W

Rth