IRL3103

PD - 9.1337C

S

D

G

TO-220AB

8/25/97

Parameter

Min.

Typ.

Max.

Units

Junction-to-Case

––––

––––

1.4

Case-to-Sink, Flat, Greased Surface

––––

0.50

––––

°C/W

Junction-to-Ambient

––––

––––

62

Thermal Resistance

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve the

lowest possible on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

Description

Parameter

Max.

Units

64

45

A

Pulsed Drain Current



220

Power Dissipation

110

W

Linear Derating Factor

0.71

W/°C

Gate-to-Source Voltage

±16

V

Single Pulse Avalanche Energy

‚

240

mJ

Avalanche Current



34

A

Repetitive Avalanche Energy



11

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

5.0

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)

Absolute Maximum Ratings