STPS80A45CHR datasheet(3/10 Pages) STMICROELECTRONICS

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1.3

Electrical characteristics

Limiting value per diodes, unless otherwise specified.

Table 3. Static electrical characteristics

Symbol

Parameter

MIL-STD-750 test

method

Test conditions(1)

Min. Typ. Max. Unit

Reverse leakage current

4016

DC method, VR = 45 V

Tj = 25 °C

4.0

µA

Tj = 125 °C

6.0

VF (2)

Forward voltage drop

4011

IF = 5 A

Tj = -55 °C

0.55 0.59

Tj = 25 °C

0.47 0.51

Tj = 125 °C

0.36 0.40

IF = 10 A

Tj = -55 °C

0.59 0.63

Tj = 25 °C

0.53 0.57

Tj = 125 °C

0.44 0.49

IF = 20 A

Tj = -55 °C

0.65 0.70

Tj = 25 °C

0.62 0.67

Tj = 125 °C

0.55 0.61

IF = 30 A

Tj = -55 °C

0.71 0.76

Tj = 25 °C

0.69 0.75

Tj = 125 °C

0.62 0.68

IF = 40 A

Tj = -55 °C

0.76 0.82

Tj = 25 °C

0.76 0.82

Tj = 125 °C

0.67 0.74

1. Measurement per diode

2. Pulse width 680 µs, duty cycle ≤ 2%

Table 4. Dynamic electrical characteristics

Symbol

Parameter

Mil-STD-750 test method

Test conditions

Min. Typ. Max. Unit

C(1)

Junction capacitance

4001

Tj = 25 °C VR = 10 V, F = 1 MHz

610

1. Guaranteed by sampling. In case the sampling acceptance criteria is not met, guaranteed by a 100% test

STPS80A45CHR

Electrical characteristics

DS13146 - Rev 2

page 3/10

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