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STGYA50M120DF3 Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STGYA50M120DF3
Descripción Electrónicos  Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT in a Max247 long leads package
PDF  15 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGYA50M120DF3 Datasheet(HTML) 3 Page - STMicroelectronics

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Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 3. Static characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)CES
Collector-emitter breakdown
voltage
VGE = 0 V, IC = 2 mA
1200
V
VCE(sat)
Collector-emitter saturation
voltage
VGE = 15 V, IC = 50 A
1.7
2.2
V
VGE = 15 V, IC = 50 A, TJ = 125 °C
1.95
VGE = 15 V, IC = 50 A, TJ = 175 °C
2.1
VF
Forward on-voltage
IF = 50 A
2.80
3.95
V
IF = 50 A, TJ = 125 °C
2.3
IF = 50 A, TJ = 175 °C
2.1
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 2 mA
5
6
7
V
ICES
Collector cut-off current
VGE = 0 V, VCE = 1200 V
25
µA
IGES
Gate-emitter leakage current
VCE = 0 V, VGE = ±20 V
±250
nA
Table 4. Dynamic characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Cies
Input capacitance
VCE = 25 V, f = 1 MHz, VGE = 0 V
-
3152
-
pF
Coes
Output capacitance
-
310
-
pF
Cres
Reverse transfer capacitance
-
123
-
pF
Qg
Total gate charge
VCC = 960 V, IC = 50 A, VGE = 0 to 15 V
(see Figure 29. Gate charge test circuit)
-
194
-
nC
Qge
Gate-emitter charge
-
27
-
nC
Qgc
Gate-collector charge
-
96
-
nC
STGYA50M120DF3
Electrical characteristics
DS13799 - Rev 2
page 3/15



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