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STIB1560DM2T-LZ Datasheet(PDF) 17 Page - STMicroelectronics

No. de pieza STIB1560DM2T-LZ
Descripción Electrónicos  SLLIMM - 2nd series IPM, 3-phase inverter, 0.15 Ω typ., 15 A, 600 V Power MOSFET
PDF  23 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STIB1560DM2T-LZ Datasheet(HTML) 17 Page - STMicroelectronics

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6.1
Guidelines
1.
Input signals HIN, LIN are active-high logic. A 100 kΩ (typ.) pull-down resistor is built-in for each input pin.
To prevent input signal oscillations, the wiring of each input should be as short as possible and the use of
RC filters (R1, C1) on each input signal is suggested. The filters should be with a time constant of about 100
ns and placed as close as possible to the IPM input pins.
2.
The use of a bypass capacitor CVCC (aluminum or tantalum) can reduce the transient circuit demand on
the power supply. Besides, to reduce any high-frequency switching noise distributed on the power lines, a
decoupling capacitor C2 (100 to 220 nF, with low ESR and low ESL) should be placed as close as possible
to each Vcc pin and in parallel with the bypass capacitor.
3.
The use of an RC filter (RSF, CSF) prevents protection circuit malfunctions. The time constant (RSF x CSF)
should be set to 1 µs and the filter must be placed as close as possible to the CIN pin.
4.
The SD is an input/output pin (open-drain type if it is used as output). It should be pulled up to a power
supply (i.e., MCU bias at 3.3/5 V) by a resistor value, which can keep the Iod no higher than 5 mA (VOD ≤
500 mV when open-drain MOSFET is ON). The filter on SD should be sized to get a desired re-starting time
after a fault event and placed as close as possible to the SD pin.
5.
A decoupling capacitor CTSO between 1 nF and 10 nF can be used to increase the noise immunity of the
TSO thermal sensor; a similar decoupling capacitor COT (between 10 nF and 100 nF) can be implemented
if the NTC thermistor is available and used. In both cases, their effectiveness is improved if these capacitors
are placed close to the MCU.
6.
The decoupling capacitor C3 (100 to 220 nF with low ESR and low ESL) in parallel with each Cboot filters
high-frequency disturbances. Both Cboot and C3 (if present) should be placed as close as possible to the
U,V,W and Vboot pins. Bootstrap negative electrodes should be connected to the U,V,W terminals directly
and separated from the main output wires.
7.
To prevent overvoltage on the VCC pin, a Zener diode (Dz) can be used.
8.
The use of the decoupling capacitor C4 (100 to 220 nF, with low ESR and low ESL) in parallel with the
electrolytic capacitor CVdc prevents surge destruction. Both capacitors C4 and CVdc should be placed as
close as possible to the IPM (C4 has priority over Cvdc).
9.
By integrating an application-specific type HVIC inside the module, direct coupling to the MCU terminals
without an optocoupler is possible.
10. Low inductance shunt resistors should be used for phase leg current sensing.
11. In order to avoid malfunctions, the wiring on N pins, the shunt resistor and PWR_GND should be as short as
possible.
12. The connection of the SGN_GND to the PWR_GND at one point only (close to the shunt resistor terminal)
can reduce the impact of power ground fluctuation.
These guidelines ensure the device specifications for application designs. For further details, please refer to the
relevant application note.
Table 13. Recommended operating conditions
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VPN
Supply voltage
Applied between P-Nu, NV, Nw
300
400
V
VCC
Control supply voltage
Applied between VCC-GND
13.5
15
18
V
VBS
High-side bias voltage
Applied between VBOOTi-OUTi
for i = U, V, W
13
18
V
tdead
Blanking time to prevent arm-short For each input signal
1.0
µs
fPWM
PWM input signal
-40 °C < TC < 100 °C
-40 °C < TJ < 125 °C
20
kHz
TC
Case operation temperature
100
°C
STIB1560DM2T-LZ
Guidelines
DS13556 - Rev 1
page 17/23



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