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MM54HC166 Datasheet(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
No. de pieza MM54HC166
Descripción Electrónicos  8-Bit Parallel In/Serial Out Shift Registers
PDF  6 Pages
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Fabricante Electrónico  NSC [National Semiconductor (TI)]
Página de inicio  http://www.national.com
Logo NSC - National Semiconductor (TI)

MM54HC166 Datasheet(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Notes12)
If MilitaryAerospace specified devices are required
please contact the National Semiconductor Sales
OfficeDistributors for availability and specifications
Supply Voltage (VCC)
b
05V to a70V
DC Input Voltage (VIN)
b
15V to VCCa15V
DC Output Voltage (VOUT)
b
05V to VCCa05V
Clamp Diode Current (IIK IOK)
g
20 mA
DC Output Current per Pin (IOUT)
g
25 mA
DC VCC or GND Current per Pin (ICC)
g
50 mA
Storage Temperature Range (TSTG)
b
65 Cto a150 C
Power Dissipation (PD)
(Note 3)
600 mW
SO Package only
500 mW
Lead Temperature (TL)
(Soldering 10 seconds)
260 C
Operating Conditions
Min
Max
Units
Supply Voltage (VCC)2
6
V
DC Input or Output Voltage
(VIN VOUT)0
VCC
V
Operating Temp Range (TA)
MM74HC
b
40
a
85
C
MM54HC
b
55
a
125
C
Input Rise or Fall Times (tr tf)
VCC e 20V
1000
ns
VCC e 45V
500
ns
VCC e 60V
400
ns
DC Electrical Characteristics (Note 4)
TAe25 C
74HC
54HC
Symbol
Parameter
Conditions
VCC
TAeb40 Cto a85 CTAeb55 Cto a125 C
Units
Typ
Guaranteed Limits
VIH
Minimum High
20V
15
15
15
V
Level Input
45V
315
315
315
V
Voltage
60V
42
42
42
V
VIL
Maximum Low
20V
05
05
05
V
Level Input
45V
135
135
135
V
Voltage
60V
18
18
18
V
VOH
Minimum High
VINeVIH or VIL
Level Output
lIOUTls20 mA
20V
20
19
19
19
V
Voltage
45V
45
44
44
44
V
60V
60
59
59
59
V
VINeVIH or VIL
lIOUTls40 mA
45V
42
398
384
37
V
lIOUTls52 mA
60V
57
548
534
52
V
VOL
Maximum Low
VINeVIH or VIL
Level Output
lIOUTls20 mA
20V
0
01
01
01
V
Voltage
45V
0
01
01
01
V
60V
0
01
01
01
V
VINeVIH or VIL
lIOUTls40 mA
45V
02
026
033
04
V
lIOUTls52 mA
60V
02
026
033
04
V
IIN
Maximum
VINeVCC or GND
60V
g
01
g
10
g
10
m
A
Input Current
VCC e 2V–6V
ICC
Maximum
VINeVCC or GND
Quiescent
IOUTe0 mA
60V
80
80
160
m
A
Supply Current
VCC e 2V–6V
Note 1
Absolute Maximum ratings are those values beyond which damage to the device may occur
Note 2
Unless otherwise specified all voltages are referenced to ground
Note 3
Power dissipation temperature deratingplastic ‘‘N’’ package b12 mW C from 65 Cto85 C ceramic ‘‘J’’ package b12 mW C from 100 Cto125 C
Note 4
For a power supply of 5Vg10% the worst-case output voltages (VOH and VOL) occur for HC at 45V Thus the 45V values should be used when
designing with this supply Worst-case VIH and VIL occur at VCC e 55V and 45V respectively (The VIH value at 55V is 385V) The worst-case leakage current
(IIN ICC and IOZ) occur for CMOS at the higher voltage and so the 60V values should be used
VIL limits are currently tested at 20% of VCC The above VIL specification (30% of VCC) will be implemented no later than Q1 CY’89
2



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