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TS33 Datasheet(PDF) 6 Page - STMicroelectronics |
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TS33 Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 24 page ![]() Table 5. Electrical characteristics for TS3320 Symbol Parameter Test conditions Min. Typ. Max. Unit VOUT Output voltage VIN = 5 V ILOAD = 0 mA Tamb = 25 °C 2.048 V Initial accuracy -0.15 0.15 % ∆VOUT/∆T Average temperaturecoefficient -40 °C < T amb <+ 85 °C 9 30 ppm/°C -40°C < Tamb<+ 125 °C 8 30 ∆VOUT/∆VIN Line regulation VIN = 2.7 V to 5.5 V -50 6 +50 ppm/V 0 °C < Tamb < 70 °C 6 - 40 °C < Tamb <+ 85 °C 8 - 40 °C < Tamb <+ 125 °C 30 ∆VOUT/∆ILOAD Load regulation VIN = 2.7 V -50 6 +50 ppm/mA ILOAD = ±5 mA 0 °C < Tamb < 70 °C 10 -40 °C < Tamb<+85 °C 20 -40 °C < Tamb <+ 125 °C 20 VDROP Minimum dropout voltage ILOAD = ±5 mA 100 160 mV 0 °C < Tamb < 70 °C 70 -40 °C < Tamb <+ 85 °C 75 -40 °C < Tamb<+ 125 °C 80 ILOAD = ± 2 mA -40 °C < Tamb<+ 85 °C 80 ISC Short-circuit current sourcing/ sinking 35 mA IQ Quiescent current 3.9 7 µA -40°C < Tamb < +85 °C 4.4 7.5 -40°C < Tamb < +125 °C 4.8 10 COUT Capacitive load 0.1 10 µF TON Turn-on settling time to 0.1 %, COUT = 1 µF 2 ms en Noise floor f = 0.1 Hz to 10 Hz 47 µVP-P TS33 Electrical characteristics DS12001 - Rev 5 page 6/24 |
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