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STF6N60DM2 Datasheet(PDF) 2 Page - STMicroelectronics

No. de pieza STF6N60DM2
Descripción Electrónicos  N-channel 600 V, 0.95 typ., 5 A MDmesh™ DM2 Power MOSFET in a TO-220FP package
PDF  12 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF6N60DM2 Datasheet(HTML) 2 Page - STMicroelectronics

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Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
±25
V
ID
Drain current (continuous) at Tcase = 25 °C
5
A
Drain current (continuous) at Tcase = 100 °C
3.2
IDM (1)
Drain current (pulsed)
20
A
PTOT
Total power dissipation at Tcase = 25 °C
20
W
dv/dt(2)
Peak diode recovery voltage slope
50
V/ns
dv/dt(3)
MOSFET dv/dt ruggedness
50
VISO
Insulation withstand voltage (RMS) from all three leads to external heat sink
(t = 1 s; TC = 25 °C)
2.5
kV
Tstg
Storage temperature range
-55 to 150
°C
Tj
Operating junction temperature range
1. Pulse width is limited by safe operating area.
2. ISD ≤ 5 A, di/dt= 900 A/μs; VDS peak < V(BR)DSS, VDD = 480 V.
3. VDS ≤ 480 V.
Table 2. Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
6.25
°C/W
Rthj-amb
Thermal resistance junction-ambient
62.5
Table 3. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR (1)
Avalanche current, repetitive or not repetitive
1.7
A
EAS (2)
Single pulse avalanche energy
132
mJ
1. Pulse width limited by Tjmax.
2. starting Tj = 25 °C, ID = IAR, VDD = 50 V.
STF6N60DM2
Electrical ratings
DS12220 - Rev 3
page 2/12



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