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TLV271 Datasheet(PDF) 4 Page - ON Semiconductor

No. de pieza TLV271
Descripción Electrónicos  Operational Amplifier, Rail-to-Rail Output, 3 MHz BW
PDF  26 Pages
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

TLV271 Datasheet(HTML) 4 Page - ON Semiconductor

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TLV271, TLV272, NCV272, TLV274, NCV274
www.onsemi.com
4
MAXIMUM RATINGS
Symbol
Rating
Value
Unit
VDD
Supply Voltage (Note 1)
TLV271
TLV/NCV272/274
16.5
36
V
V
VID
Input Differential Voltage
$Supply Voltage
V
VI
Input Common Mode Voltage Range (Note 1)
−0.2 V to (VDD +
0.2 V)
V
II
Maximum Input Current
$10
mA
IO
Output Current Range
$100
mA
Continuous Total Power Dissipation (Note 1)
200
mW
TJ
Maximum Junction Temperature
150
°C
TA
Operating Ambient Temperature Range (free−air)
−40 to 125
°C
TSTG
Storage Temperature Range
−65 to 150
°C
ESDHBM
ESD Capability, Human Body Model
2
kV
ESDCDM
ESD Capability, Charged Device Model
TLV271
TLV/NCV272
TLV/NCV274
TBD
2
1
kV
kV
kV
Mounting Temperature (Infrared or Convection − 20 sec)
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functional-
ity should not be assumed, damage may occur and reliability may be affected.
1. Continuous short−circuit operation to ground at elevated ambient temperature can result in exceeding the maximum allowed junction
temperature of 150°C. Output currents in excess of 45 mA over long term may adversely affect reliability. Shorting output to either V+
or V− will adversely affect reliability.
THERMAL INFORMATION
Parameter
Symbol
Package
Single Layer
Board (Note 2)
Multi−Layer
Board (Note 3)
Unit
Junction−to−Ambient
qJA
TSOP−5
333
195
°C/W
Micro−8 / MSOP−8
236
167
SOIC−8
190
131
SOIC−14
142
101
TSSOP−14
179
128
2. Values based on a 1S standard PCB according to JEDEC51−3 with 1.0 oz copper and a 300 mm2 copper area
3. Values based on a 1S2P standard PCB according to JEDEC51−7 with 1.0 oz copper and a 100 mm2 copper area



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