STDLED602 datasheet(3/19 Pages) STMICROELECTRONICS

No. de pieza	STDLED602

Descripción Electrónicos	N-channel 600 V, 4 Ω typ., 2 A Power MOSFET in DPAK and IPAK packages

PDF	19 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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3 / 19 page

DocID024406 Rev 1

3/19

STDLED602, STULED602

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

600

VGS

Gate- source voltage

± 30

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

1.26

IDM

(1)

Pulse width limited by safe operating area

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

Derating factor

0.36

W/°C

ESD

Gate-source human body model (C = 100 pF, R

= 1.5 k

Ω)

2.5

dv/dt (2)

ISD ≤ 2 A, di/dt ≤ 400 A/µs, peak VDS < V(BR)DSS

Peak diode recovery voltage slope

V/ns

Tstg

Storage temperature

-55 to 150

°C

Max. operating junction temperature

150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

DPAK

IPAK

Rthj-case Thermal resistance junction-case max

2.78

°C/W

Rthj-pcb

(1)

When mounted on 1 inch² FR-4 board, 2 oz Cu

Thermal resistance junction-pcb max

°C/W

Rthj-amb

Thermal resistance junction-amb max

100

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Obsolete

Product(s)

- Obsolete

Product(s)

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