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STM32G081EB Datasheet(PDF) 59 Page - STMicroelectronics

No. de pieza STM32G081EB
Descripción Electrónicos  Arm® Cortex®-M0 32-bit MCU, 128 KB Flash, 36 KB RAM,4x USART, timers, ADC, DAC, comm. I/Fs, AES, RNG, 1.7-3.6V
PDF  136 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STM32G081EB Datasheet(HTML) 59 Page - STMicroelectronics

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DS12231 Rev 4
59/136
STM32G081xB
Electrical characteristics
108
5.3.4
Embedded voltage reference
The parameters given in Table 24 are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 21: General operating
conditions.
Figure 15. VREFINT vs. temperature
Table 24. Embedded internal voltage reference
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VREFINT
Internal reference voltage
-40°C < TJ < 130°C
1.182 1.212
1.232
V
tS_vrefint (1)
ADC sampling time when reading
the internal reference voltage
-4(2)
--
µs
tstart_vrefint
Start time of reference voltage
buffer when ADC is enable
--
8
12(2)
µs
IDD(VREFINTBUF)
VREFINT buffer consumption from
VDD when converted by ADC
-
-
12.5
20(2)
µA
∆VREFINT
Internal reference voltage spread
over the temperature range
VDD = 3 V
-
5
7.5(2)
mV
TCoeff_vrefint
Temperature coefficient
-
-
30
50(2)
ppm/°C
ACoeff
Long term stability
1000 hours, T = 25 °C
-
300
1000(2)
ppm
VDDCoeff
Voltage coefficient
3.0 V < VDD < 3.6 V
-
250
1200(2)
ppm/V
VREFINT_DIV1
1/4 reference voltage
-
24
25
26
%
VREFINT
VREFINT_DIV2
1/2 reference voltage
49
50
51
VREFINT_DIV3
3/4 reference voltage
74
75
76
1. The shortest sampling time can be determined in the application by multiple iterations.
2. Guaranteed by design.
MSv40169V1
1.185
1.19
1.195
1.2
1.205
1.21
1.215
1.22
1.225
1.23
1.235
-40
-20
0
20
40
60
80
100
120
V
°C
Mean
Min
Max



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