STF826 - STN826

2 Electrical Characteristics

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2

Electrical Characteristics

Table 3.

Electrical Characteristics (TCASE = 25°C; unless otherwise specified)

2 Pulsed duration = 300

μs, duty cycle ≤1.5%.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off Current

(VBE = 0)

VCE = -60V

-10

μA

ICEO

Collector Cut-off Current

(IB = 0)

VCE = -30V

-100

μA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = -5V

-10

μA

V(BR)CBO

Collector-Base

Breakdown Voltage (IE = 0)

IC = -100μA-60

V

V(BR)CEO

Note 2

Collector-Emitter Breakdown

Voltage (IB = 0)

IC = -10 mA

-30

V

V(BR)EBO

Collector-Emitter Breakdown

Voltage (IC = 0)

IE = -100 μA-5

V

VCE(sat)

Note 2

Collector-Emitter Saturation

Voltage

IC = -1 A

IB = -50 mA

IC = -2 A

IB = -100 mA

IC = -3 A

IB = -150 mA

-0.4

-0.7

-1.1

V

V

V

VBE(sat)

Note 2

Base-Emitter Saturation Voltage

IC = -2 A

IB = -100 mA

-1.2

V

hFE

DC Current Gain

IC = -100 mA

VCE = -2 V

IC = -1 A

VCE = -2 V

IC = -3 A

VCE = -2 V

100

80

30

300

fT

Transistor Frequency

VCE = -10 V

Ic= -0.1 A

100

MHz