STY50N105DK5

Electrical ratings

DocID024200 Rev 2

3/12

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±30

V

ID

Drain current (continuous) at TC = 25 °C

46

A

Drain current (continuous) at TC = 100 °C

30

A

IDM (1)

Drain current (pulsed)

184

A

PTOT

Total dissipation at TC = 25 °C

625

W

dv/dt (2)

Peak diode recovery voltage slope

50

V/ns

dv/dt (3)

MOSFET dv/dt ruggedness

50

V/ns

Tj

Operating junction temperature range

-55 to 150

°C

Tstg

Storage temperature range

Notes:

(1)Pulse width limited by safe operating area

(2)ISD ≤ 23 A, di/dt ≤ 400 A/μs; VDS peak ≤ V(BR)DSS, VDD = 525 V

(3)VDS ≤ 840 V

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

0.2

°C/W

Rthj-amb

Thermal resistance junction-ambient

30

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAS

Single pulse avalanche energy (pulse width limited by TJMAX)

16

A

EAS

Single pulse avalanche energy

(starting TJ = 25°C, ID = IAS, VDD = 50 V)

1550

mJ