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T1235-6G Datasheet(PDF) 6 Page - STMicroelectronics |
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T1235-6G Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 16 page ![]() Figure 9. Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) 0.1 1 .0 10.0 100.0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 (dI/dt)c [(dV/dt)c] / specified (dI/dt)c C B (dV/dt)c(V/µs) T1210/SW T1235/T1250/CW/BW Figure 10. Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values)(TW) 0.1 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1.0 10.0 100.0 TW, T1205 (dI/dt)c [(dV/dt)c] / specified (dI/dt)c (dV/dt)c(V/µs) Figure 11. Relative variation of critical rate of decrease of main current versus junction temperature 0 2 5 5 0 7 5 100 125 0 1 2 3 4 5 6 Tj(°C) (dl/dt)c [Tj] / (dl/dt)c [Tj specified] Figure 12. D2PAK thermal resistance junction to ambient versus copper surface under tab 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 Rth(j-a) (°C/W) D²PAK Epoxy printed board FR4, copper thickness = 35 µm SCu(cm²) BTA12, BTB12, T1205, T1210, T1235, T1250 Characteristics (curves) DS2115 - Rev 12 page 6/16 |
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