DF2B7AFS

2

5. Quick Reference Data

Characteristics

Working peak reverse voltage

Total capacitance

Dynamic resistance

Electrostatic discharge voltage

(IEC61000-4-2) (Contact)

Symbol

VRWM

Ct

RDYN

VESD

Note

(Note 1)

(Note 2)

(Note 3)

Test Condition

�

VR = 0 V, f = 1 MHz

�

�

Min

�

�

�

�

Typ.

�

8.5

0.2

�

Max

5.5

10

�

30

Unit

V

pF

Ω

kV

Note 1: Recommended operating condition.

Note 2: TLP parameters: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of

dynamic resistance using least squares fit of TLP characteristics between IPP1 = 8 A and IPP2 = 16 A.

Note 3: Criterion: No damage to devices.

5.1. ESD Clamp Waveform (Note)

Fig. 5.1.1

+8 kV

Fig. 5.1.2

-8 kV

Fig. 5.1.3

IEC61000-4-2 (Contact)

Note:

The above characteristics curves are presented for reference only and not guaranteed by production test,

unless otherwise noted.

2022-08-22

Rev.3.0

©2016-2022

Toshiba Electronic Devices & Storage Corporation