DF2B7PCT

2

5. Example of Circuit Diagram

6. Quick Reference Data

Characteristics

Working peak reverse voltage

Total capacitance

Dynamic resistance

Electrostatic discharge voltage

(IEC61000-4-2) (Contact)

Symbol

VRWM

Ct

RDYN

VESD

Note

(Note 1)

(Note 2)

(Note 3)

Test Condition

�

VR = 0 V, f = 1 MHz

�

�

Min

�

�

�

�

Typ.

�

45

0.1

�

Max

5.5

52

�

30

Unit

V

pF

Ω

kV

Note 1: Recommended operating condition.

Note 2: TLP parameters: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of

dynamic resistance using least squares fit of TLP characteristics between IPP1 = 8 A and IPP2 = 30 A.

Note 3: Criterion: No damage to devices.

2021-03-22

Rev.3.0

©2020-2021

Toshiba Electronic Devices & Storage Corporation