1N4148 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 May 25

Philips Semiconductors

Product speciﬁcation

High-speed diodes

1N4148; 1N4448

ELECTRICAL CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed circuit-board without metallization pad.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

forward voltage

see Fig.3

1N4148

IF =10mA

−

1N4448

IF = 5 mA

0.62

0.72

IF = 100 mA

−

reverse current

VR = 20 V; see Fig.5

VR = 20 V; Tj = 150 °C; see Fig.5

−

µA

reverse current; 1N4448

VR = 20 V; Tj = 100 °C; see Fig.5

−

µA

diode capacitance

f = 1 MHz; VR = 0; see Fig.6

trr

reverse recovery time

when switched from IF = 10 mA to

IR = 60 mA; RL = 100 Ω;

measured at IR = 1 mA; see Fig.7

4ns

Vfr

forward recovery voltage

when switched from IF =50mA;

tr = 20 ns; see Fig.8

−

2.5

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

lead length 10 mm

240

K/W

Rth j-a

thermal resistance from junction to ambient

lead length 10 mm; note 1

350

K/W

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