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APT551R2DN Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza APT551R2DN
Descripción Electrónicos  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

APT551R2DN Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
APT551R2DN
DESCRIPTION
·
Drain Current :ID= 8A@ TC=25℃
·
Drain Source Voltage
: VDSS= 550V(Min)
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
550
V
VGS
Gate-Source Voltage
±
30
V
ID
Drain Current-continuous@ TC=25℃
8
A
IDM
Drain Current-Single Pluse
32
A
Ptot
Total Dissipation@TC=25℃
180
W
Tj
Max. Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.69
℃
/W


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