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IRHM9130 Datasheet(PDF) 2 Page - International Rectifier

No. de pieza IRHM9130
Descripción Electrónicos  RADIATION HARDENED POWER MOSFET / 100V, P-CHANNEL
PDF  8 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRHM9130 Datasheet(HTML) 2 Page - International Rectifier

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IRHM9130
Pre-Irradiation
2
www.irf.com
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
-100
V
VGS = 0V, ID =-1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
-0.1
V/°C
Reference to 25°C, ID = -1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
0.3
VGS = -12V, ID = -7.0A➃
Resistance
0.325
VGS = -12V, ID = -11A➃
VGS(th)
Gate Threshold Voltage
-2.0
-4.0
V
VDS = VGS, ID = -1.0mA
gfs
Forward Transconductance
2.5
S ( )
VDS >-15V, IDS = -7.0A ➃
IDSS
Zero Gate Voltage Drain Current
-25
VDS= -80V ,VGS=0V
-250
VDS = -80V,
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
-100
VGS = -20V
IGSS
Gate-to-Source Leakage Reverse
100
VGS = 20V
Qg
Total Gate Charge
45
VGS =-12V, ID = -11A
Qgs
Gate-to-Source Charge
10
nC
VDS = -50V
Qgd
Gate-to-Drain (‘Miller’) Charge
25
td(on)
Turn-On Delay Time
30
VDD = -50V, ID = -11A,
tr
Rise Time
50
VGS =-12V, RG = 7.5Ω
td(off)
Turn-Off Delay Time
70
tf
Fall Time
70
LS + LD
Total Inductance
6.8
Ciss
Input Capacitance
1200
VGS = 0V, VDS = -25V
Coss
Output Capacitance
300
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
74
nA
nH
ns
µA
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
1.67
RthCS
Case-to-Sink
0.21
RthJA
Junction-to-Ambient
30
Typical socket mount
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
-11
ISM
Pulse Source Current (Body Diode) ➀
-44
VSD
Diode Forward Voltage
-3.0
V
Tj = 25°C, IS = -11A, VGS = 0V ➃
trr
Reverse Recovery Time
250
nS
Tj = 25°C, IF = -11A, di/dt ≤ -100A/µs
QRR Reverse Recovery Charge
0.84
µC
VDD ≤ -50V ➃
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
°C/W



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