HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HT200101

Issued Date : 2000.05.01

Revised Date : 2005.12.02

Page No. : 1/5

HT112

HSMC Product Specification

HT112

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HT112 is designed for use in general purpose amplifier and low-speed

switching applications.

• Maximum Temperatures

Storage Temperature ........................................................................................................................... -55 ~ +150

°C

Junction Temperature ................................................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (T

Total Power Dissipation (T

• Thermal Resistance

• Maximum Voltages and Currents

BV

BV

BV

I

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BV

CBO

100

-

-

V

I

BV

CEO

100

-

-

V

I

I

CBO

--

1

mA

V

I

CEO

--

2

mA

V

I

EBO

--

2

mA

V

*V

CE(sat)

--

2.5

V

I

*V

BE(on)

--

2.8

V

I

*h

FE1

1-

-

K

I

*h

FE2

500

-

-

I

Cob

-

-

100

pF

V

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

TO-126