IXTY3N50P datasheet(1/5 Pages) IXYS

No. de pieza	IXTY3N50P

Descripción Electrónicos	PolarHV Power MOSFET

PDF	5 Pages

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Fabricante Electrónico	IXYS [IXYS Corporation]

Página de inicio	http://www.ixys.com

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1 / 5 page

G = Gate

D = Drain

S = Source

TAB = Drain

DS99200E(12/05)

Symbol

Test Conditions

Characteristic Values

(T

J = 25° C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 250 µA

500

V

GS(th)

V

DS = VGS, ID = 50µA

3.0

5.5

V

I

GSS

V

GS = ± 30 VDC, VDS = 0

±100

nA

I

DSS

V

DS = VDSS

5

µA

V

GS = 0 V

T

J = 125° C50

µA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25

2.0

Ω

Pulse test, t

≤300 µs, duty cycle d ≤ 2 %

PolarHVTM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Features

l International standard packages

l Unclamped Inductive Switching (UIS)

rated

l Low package inductance

- easy to drive and to protect

Advantages

l

Easy to mount

l

Space savings

l

High power density

TO-263 (IXTA)

TO-220 (IXTP)

D

(TAB)

G

S

IXTA 3N50P

IXTP 3N50P

IXTY 3N50P

V

DSS

= 500 V

I

D25

= 3.6 A

R

DS(on)

≤≤≤≤≤ 2.0 Ω

Ω

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

° C to 150° C

500

V

DGR

T

J

= 25

° C to 150° C; R

GS = 1 MΩ

500

V

GSS

±30

V

GSM

±40

V

I

D25

T

C = 25° C

3.6

A

I

DM

T

C = 25° C, pulse width limited by TJM

8A

I

AR

T

C = 25° C3

A

E

AR

T

C = 25° C10

mJ

E

AS

T

C = 25° C

180

mJ

dv/dt

I

S

≤I

DM, di/dt ≤100 A/µs, VDD ≤VDSS,

10

V/ns

T

J

≤150° C, R

G = 20 Ω

P

D

T

C = 25° C70

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

T

SOLD

Plastic body for 10 s

260

° C

M

d

Mounting torque

(TO-220)

1.13/10 Nm/lb.in.

Weight

TO-220

4

g

TO-263

3

g

TO-252

0.8

g

TO-252 (IXTY)

G

S

(TAB)

G

S

(TAB)

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