TIPL760 datasheet(1/2 Pages) ISC

No. de pieza	TIPL760

Descripción Electrónicos	isc Silicon NPN Darlington Power Transistor

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

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isc Silicon NPN Darlington Power Transistor

TIPL760

FEATURES

·

Collector-Emitter Breakdown Voltage-

: V(BR)CEO = 400V(Min.)

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

DESCRIPTION

·

Rugged Triple-duffused planar construction

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

850

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

10

V

IC

Collector Current-Continuous

4

A

ICM

Peak collector current

8

A

PC

Collector Power Dissipation

@TC=25℃

75

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

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TIPL760 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

TIPL760 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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