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X0403DF Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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X0403DF Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Thyristors X0403DF FEATURES · This part is intended for general purposeapplications where low gate sensitivity is requiredlike small engine ignition,SMPS crowbar protection, food processor. · Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 400 V VRRM Repetitive peak off-state voltage 400 V IT(AV) Average on-state current 2.5 A IT(RMS) on-state RMScurrent 4 A PGM Peak gate power 0.5 W PG(AV) Average gate power 0.2 W Tj Operating junction temperature -40~150 ℃ Tstg Storage temperature -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 18 ℃ /W |
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