DMV1500SD datasheet(2/8 Pages) STMICROELECTRONICS

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DMV1500SD

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Table 3: Absolute Ratings (limiting values, per diode)

Table 4: Thermal resistances

Table 5: Static Electrical Characteristics

Pulse test:

* tp = 5 ms,

δ < 2%

** tp = 380 µs,

δ < 2%

To evaluate the maximum conduction losses of the DAMPER and MODULATION diodes use the following equations :

DAMPER: P = 1.2 x IF(AV) + 0.050 x IF

(RMS)

MODULATION: P = 0.89 x IF(AV) + 0.055 x IF

(RMS)

Table 6: Recovery Characteristics

Symbol

Parameter

Value

Unit

Damper

Modul.

VRRM

Repetitive peak reverse voltage

1500

600

IFSM

Surge non repetitive forward current

tp = 10ms sinusoidal

Tstg

Storage temperature range

-40 to +150

°C

Maximum operating junction temperature

150

°C

Symbol

Parameter

Value (max.)

Unit

Rth(j-c)

Junction to case thermal resistance

°C/W

Symbol

Parameter

Test conditions

Value

Unit

Tj = 25°C

Tj = 125°C

Typ.

Max.

Typ.

Max.

IR *

Reverse leakage current

Damper

VR = 1500 V

100

1000

µA

Modul.

VR = 600 V

VF **

Forward voltage drop

Damper

IF = 6 A

1.2

1.75

1.1

1.5

Modul.

IF = 6 A

1.15

1.4

1.25

Symbol

Parameter

Test conditions

Value

Unit

Damper

Modul.

Typ.

Max.

Typ.

Max.

trr

Reverse recovery time

IF = 100mA

IR =100mA

IRR = 10mA

Tj = 25°C 1000

2000

250

400

IF = 1A

dIF/dt = -50 A/µs

VR =30V

Tj = 25°C

150

250

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