1 - 4

© 2000 IXYS All rights reserved

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

1000

V

V

DGR

T

J

= 25

°C to 150°C; R

1000

V

V

GS

Continuous

±20

V

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C4

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

16

A

I

AR

T

C

= 25

°C4

A

E

AR

T

C

= 25

°C

20

mJ

E

AS

700

mJ

dv/dt

I

S

£ I

5

V/ns

T

J

£ 150°C, R

P

D

T

C

= 25

°C

150

W

T

J

-55 to +150

°C

T

JM

150

°C

T

stg

-55 to +150

°C

T

L

1.6 mm (0.063 in) from case for 10 s

300

°C

M

d

Mounting torque (TO-220)

1.13/10

Nm/lb.in.

Weight

TO-220

4

g

TO-263

2

g

N-Channel Enhancement Mode

Avalanche Rated, Low Q

Features

• IXYS advanced low Q

• Low gate charge and capacitances

- easier to drive

- faster switching

• International standard packages

• Low R

DS (on)

• Rated for unclamped Inductive load

Switching (UIS)

• Molding epoxies meet UL 94 V-0

flammability classification

Advantages

• Easy to mount

• Space savings

• High power density

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

V

DSS

V

1000

V

V

GS(th)

V

DS

= V

3.0

5.0

V

I

GSS

V

±100

nA

I

DSS

V

DS

= V

DSS

T

J

= 25

°C50

mA

V

T

J

= 125

°C1

mA

R

DS(on)

V

3.0

W

Pulse test, t

£ 300 ms, duty cycle d £ 2 %

Power MOSFETs

Q-Class

V

DSS

=1000 V

I

D25

=4 A

R

DS(on)

=

3.0

W

t

Preliminary Data Sheet

G

S

TO-263 (IXFA)

G

D

S

TO-220 (IXFP)

G = Gate

D

= Drain

S = Source

TAB = Drain

IXFA 4N100Q

IXFP 4N100Q

D (TAB)

D (TAB)

98705 (02/04/00)

IXYS reserves the right to change limits, test conditions, and dimensions.