M58WR032EB datasheet(79/81 Pages) STMICROELECTRONICS

No. de pieza	M58WR032EB

Descripción Electrónicos	32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory

PDF	81 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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M58WR032ET, M58WR032EB

Table 43. Command Interface States - Lock Table, Next Output

Note: 1. CI = Command Interface, CR = Configuration Register, EFP = Enhanced Factory Program, Quad EFP = Quadruple Enhanced Fac-

tory Program, P/E. C. = Program/Erase Controller.

2. EFP and Quad EFP exit when Block Address is different from first Block Address and data is FFFFh.

3. If the P/E.C. is active, both cycles are ignored.

4. Illegal commands are those not defined in the command set.

Current CI State

Next Output State After Command Input

Lock/CR

Setup(3)

OTP Setup

(3)

Block Lock

Confirm

Block

Lock-Down

Confirm

Set CR

Confirm

EFP Exit,

Quad EFP

Exit (2)

Illegal

Command

(4)

P/E. C.

Operation

Completed

Program Setup

Status Register

Output

Unchanged

Erase Setup

OTP Setup

Program in Erase

Suspend

EFP Setup

EFP Busy

EFP Verify

Quad EFP Setup

Quad EFP Busy

Lock/CR Setup

Status Register

Array

Status Register

Output

Unchanged

Lock/CR Setup in

Erase Suspend

OTP Busy

Status Register

Output Unchanged

Array

Output

Unchanged

Output

Unchanged

Ready

Status Register

Output Unchanged

Array

Output

Unchanged

Output

Unchanged

Program Busy

EraseBusy

Program/Erase

Program in Erase

Suspend Busy

Program in Erase

Suspend

Suspended

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