BAV756S

High-speed switching diode

28 October 2022

Product data sheet

1. General description

High-speed switching diode, encapsulated in a very small SOT363 (SC-88) Surface-Mounted

Device (SMD) plastic package.

2. Features and benefits

• High switching speed: trr ≤ 4 ns

• Low capacitance: Cd ≤ 2 pF

• Low leakage current

• Reverse voltage: VR ≤ 90 V

• Very small SMD plastic packages

• AEC-Q101 qualified

3. Applications

• High-speed switching

• General-purpose switching

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

IR

reverse current

VR = 80 V; Tamb = 25 °C

-

-

0.5

µA

VR

reverse voltage

-

-

90

V

trr

reverse recovery time

IF = 10 mA; IR = 10 mA; RL = 100 Ω;

IR(meas) = 1 mA; Tamb = 25 °C

-

-

4

ns

5. Pinning information

Table 2. Pinning information

Pin

Symbol

Description

Simplified outline

Graphic symbol

1

A1

anode (diode 1)

2

K2

cathode (diode 2)

3

A2; A3

common anode (diode 2

and diode 3)

4

K3

cathode (diode 3)

5

A4

anode (diode 4)

6

K1; K4

common cathode (diode 1

and diode 4)

1

3

2

4

5

6

TSSOP6 (SOT363)

006aab103

A1

A2; A3

K1; K4

K2

A4

K3