MMDT2227

Characteristics

Kennwerte

Tj = 25°C

Min.

Typ.

Max.

DC current gain – Kollektor-Basis-Stromverhältnis

VCE = 10 V

IC = 0.1 mA

VCE = -10 V

IC = -0.1 mA

T1 - NPN

T2 - PNP

hFE

35

75

–

–

VCE = 10 V

IC = 1 mA

VCE = -10 V

IC = -1 mA

T1 - NPN

T2 - PNP

50

100

–

–

VCE = 10 V

IC = 10 mA

VCE = -10 V

IC = -10 mA

T1 - NPN

T2 - PNP

75

100

–

–

VCE = 10 V

IC = 150 mA

VCE = -10 V

IC = -150 mA

T1 - NPN

T2 - PNP

100

–

300

VCE = 10 V

IC = 500 mA

VCE = -10 V

IC = -500 mA

T1 - NPN

T2 - PNP

40

50

–

–

Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 1)

IC = 150 mA

IB = 15 mA

IC = -150 mA

IB = -15 mA

T1 - NPN

T2 - PNP

VCEsat

–

–

0.3 V

-0.4 V

IC = 500 mA

IB = 50 mA

IC = -500 mA

IB = -50 mA

T1 - NPN

T2 - PNP

VCEsat

–

–

1.0 V

-1.6 V

Base-Emitter-voltage – Basis-Emitter-Spannung 1)

IC = 150 mA

IB = 15 mA

IC = -150 mA

IB = -15 mA

T1 - NPN

T2 - PNP

VBE

0.6 V

–

–

–

1.2 V

-1.3 V

IC = 500 mA

IB = 50 mA

IC = -500 mA

IB = -50 mA

T1 - NPN

T2 - PNP

VBE

–

–

–

–

2.0 V

-2.6 V

Collector-Base cutoff current – Kollektor-Basis-Reststrom

VCB = 60 V

E open

VCB = -60 V

E open

ICBO

–

–

10 nA

-10 nA

Emitter-Base cutoff current – Emitter-Basis-Reststrom

VEB = 3 V

C open

VEB = -3 V

C open

IEBO

–

–

10 nA

-10 nA

Gain-Bandwidth Product – Transitfrequenz

VCE = 20 V, IC = 20 mA, f = 100 Mhz

VCE = -20 V, IC = -20 mA, f = 100 MHz

fT

300 Mhz

200 Mhz

–

–

Delay & Rise Time – Verzögerungs- und Anstiegszeit

VCC = 30 V

IC = 150m A VBE(off) = - 0.5 V

IB1 = 15 mA

td

tr

–

10 ns

25 ns

–

Storage & Fall Time – Speicher- und Abfallzeit

VCC = 30 V

IC = 150m A IB1 = IB2 =15 mA

ts

tf

–

225 ns

60 ns

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE =ie = 0, f = 1 Mhz

VCB = -10 V, IE =ie = 0, f = 1 MHz

T1 - NPN

T2 - PNP

CCBO

–

–

8.0 pF

Typ. thermal resistance junction to ambient (per device)

Typ. Wärmewiderstand Sperrschicht – Umgebung (pro Bauteil)

RthA

420 K/W 2)

Disclaimer: See data book page 2 or website

Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet

1

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

2

Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

http://www.diotec.com/

© Diotec Semiconductor AG