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STM32U595AI Datasheet(PDF) 254 Page - STMicroelectronics

No. de pieza STM32U595AI
Descripción Electrónicos  Ultra-low-power Arm® Cortex®-M33 32-bit MCUTrustZone®FPU,240 DMIPS, up to 4 MB Flash, 2.5 MB SRAM, LTDC, MIPI® DSI
PDF  377 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32U595AI Datasheet(HTML) 254 Page - STMicroelectronics

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Electrical characteristics
STM32U59xxx
254/377
DS13633 Rev 1
tprog_page One 8-Kbyte page programming time
fAHB = 160 MHz, normal mode
60.2
-
ms
fAHB = 160 MHz, burst mode
24.5
-
tprog_bank One 2-Mbyte bank programming time
fAHB = 160 MHz, normal mode
15420
-
fAHB = 160 MHz, burst mode
6280
-
tERASE One 8-Kbyte page erase time
10 k endurance cycles
1.5
2.4
100 k endurance cycles
1.7
3.4
tME
Mass erase time (one bank)
10 k endurance cycles
220
616
Mass erase time (two banks)
440
1230
IDD(3)
Average consumption from VDD
Write mode
2.1
-
mA
Erase mode
1.3
-
Maximum current (peak)
Write mode
2.6
-
Erase mode
3.0
-
1. Specified by design. Not tested in production.
2. Evaluated by characterization after cycling. Not tested in production.
3. Evaluated by characterization. Not tested in production.
Table 77. Flash memory characteristics(1) (continued)
Symbol
Parameter
Conditions
Typ
Max(2)
Unit
Table 78. Flash memory endurance and data retention
Symbol
Parameter
Conditions
Min(1)
Unit
NEND
Endurance
Whole bank
TA = –40 to 125 °C
10
kcycles
Limited to 256 Kbytes per bank
100
tRET
Data retention
Whole bank
TA = 85 °C after 1 kcycle(2)
30
Years
TA = 105 °C after 1 kcycle(2)
15
TA = 125 °C after 1 kcycle(2)
10
TA = 55 °C after 10 kcycle(2)
30
TA = 85 °C after 10 kcycle(2)
15
TA = 105 °C after 10 kcycle(2)
10
Limited to 256 Kbytes per bank
TA = 55 °C after 100 kcycle(2)
30
TA = 85 °C after 100 kcycle(2)
15
TA = 105 °C after 100 kcycle(2)
10
1. Evaluated by characterization. Not tested in production.
2. Cycling performed over the whole temperature range.



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