STPST2H100AF datasheet(4/14 Pages) STMICROELECTRONICS

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1.1

Characteristics (curves)

Figure 3. Average forward current versus lead

temperature (δ = 0.5)

IF(AV)(A)

100

125

150

175

Tl(°C)

SOD128-Flat

SOD123-Flat

SMB Flat

Figure 4. Relative variation of thermal impedance junction

to lead versus pulse duration (SOD123Flat)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Zth(j-l)/Rth(j-l)

tP(s)

Single pulse

Figure 5. Relative variation of thermal impedance junction

to lead versus pulse duration (SOD128Flat)

Zth(j-l)/Rth(j-l)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Single pulse

tP(s)

Figure 6. Relative variation of thermal impedance junction

to lead versus pulse duration (SMB Flat)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Zth(j-l)/Rth(j-l)

Single pulse

tP(s)

Figure 7. Reverse leakage current versus reverse voltage

applied (typical values)

IR(µA)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

100

VR(V)

Tj = 25 °C

Tj = 100 °C

Tj = 75 °C

Tj = 50 °C

Tj = 125 °C

Tj = 150 °C

Figure 8. Junction capacitance versus reverse voltage

applied (typical values)

100

1000

0.1

1.0

10.0

100.0

F = 1 MHz

VOSC = 30 mVRMS

Tj = 25 °C

VR(V)

C(pF)

STPST2H100

Characteristics (curves)

DS14190 - Rev 1

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