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STM32C011F6P3TR Datasheet(PDF) 58 Page - STMicroelectronics

No. de pieza STM32C011F6P3TR
Descripción Electrónicos  Arm® Cortex®-M0 32-bit MCU, 32 KB Flash, 6 KB RAM,2 x USART, timers, ADC, comm. I/Fs, 2-3.6 V
PDF  94 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32C011F6P3TR Datasheet(HTML) 58 Page - STMicroelectronics

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Electrical characteristics
STM32C011x4/x6
58/94
DS13866 Rev 3
tprog_bank
Bank (32 Kbyte(2))
programming time
Normal programming
-
0.4
0.6
s
Fast programming
-
0.2
0.4
tME
Mass erase time
-
-
22.1
40.1
ms
IDD(FlashA)
Average consumption from
VDD
Programming
-
3.0
-
mA
Page erase
-
3.0
-
Mass erase
-
5.0
-
IDD(FlashP) Maximum current (peak)
Programming, 2 µs peak
duration
-7.0
-
mA
Erase, 41 µs peak duration
-
7.0
-
1. Specified by design – Not tested in production.
2. Values provided also apply to devices with less flash memory than one 32 Kbyte bank
Table 42. Flash memory characteristics(1) (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 43. Flash memory endurance and data retention
Symbol
Parameter
Conditions
Min(1)
Unit
NEND
Endurance
TJ = -40 to +130 °C
10
kcycles
tRET
Data retention
1 kcycle(2) at TA = 85 °C
30
Years
1 kcycle(2) at TA = 105 °C
15
1 kcycle(2) at TA = 125 °C
7
10 kcycles(2) at TA = 55 °C
30
10 kcycles(2) at TA = 85 °C
15
10 kcycles(2) at TA = 105 °C
10
1. Evaluated by characterization – Not tested in production..
2. Cycling performed over the whole temperature range.



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