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STGAP2GSNCTR Datasheet(PDF) 7 Page - STMicroelectronics

No. de pieza STGAP2GSNCTR
Descripción Electrónicos  Isolated 3 A single gate driver for Enhancement mode GaN FETs
PDF  20 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGAP2GSNCTR Datasheet(HTML) 7 Page - STMicroelectronics

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5
Isolation
Table 6. Isolation and safety-related specifications
Parameter
Symbol
Value
Unit
Conditions
Clearance
(Minimum External Air Gap)
CLR
4
mm
Measured from input terminals to output terminals, shortest
distance through air
Creepage (*)
(Minimum External Tracking)
CPG
4
mm
Measured from input terminals to output terminals, shortest
distance path along body
Comparative Tracking Index (Tracking
Resistance)
CTI
≥ 400
V
DIN IEC 112/VDE 0303 Part 1
Isolation Group
-
II
-
Material Group (DIN VDE 0110, 1/89, Table 1)
Table 7. Isolation characteristics
Parameter
Symbol
Test Conditions
Characteristic
Unit
Input to Output test voltage
In accordance with VDE 0884-17
VPR
Method a, Type test
2720
VPEAK
VPR = 2720 V, tm = 10 s
Partial discharge < 5 pC
Method b1, 100 % Production test
3200
VPEAK
VPR = 3200 V, tm = 1 s
Partial discharge < 5 pC
Transient Overvoltage
(Highest Allowable Overvoltage)
VIOTM
tini = 60 s, Type test
4800
VPEAK
Maximum Surge Test Voltage
VIOSM
Type test
4800
VPEAK
Isolation Resistance
RIO
VIO = 500 V; Type test
>109
Ω
Table 8. Isolation voltage
Parameter
Symbol
Characteristic
Unit
Isolation Withstand Voltage, 1min (Type test)
VISO
2828/4000
VRMS/VPEAK
Isolation Test Voltage, 1sec (100% production)
VISOtest
3394/4800
VRMS/VPEAK
STGAP2GSN
Isolation
DS14151 - Rev 1
page 7/20



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