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PCF2131 Datasheet(PDF) 59 Page - NXP Semiconductors

No. de pieza PCF2131
Descripción Electrónicos  Nano-power highly accurate RTC with integrated quartz crystal
PDF  86 Pages
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Fabricante Electrónico  NXP [NXP Semiconductors]
Página de inicio  http://www.nxp.com
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PCF2131 Datasheet(HTML) 59 Page - NXP Semiconductors

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NXP Semiconductors
PCF2131
Nano-power highly accurate RTC with integrated quartz crystal
9 Static characteristics
VDD = 1.2 V to 5.5 V; VSS = 0 V; Tamb = -40 °C to +85 °C, unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Supplies
VDD
supply voltage
[1] 1.2
-
5.5
V
VBAT
battery supply voltage
1.2
-
5.5
V
Vlow
low voltage
-
1.15
-
V
interface active; supplied by VDD
SPI-bus (fSCL = 6.5 MHz)
-
-
800
µA
I2C-bus (fSCL = 400 kHz)
-
-
200
µA
interface inactive (fSCL = 0 Hz) [3] ; TCR[1:0] = 00 (see Table 16)
PWRMNG[2:0] = 111 (see Table 22);
COF[2:0] = 111 (see Table 18)
TC_DIS = 1 (see Table 5); 100TH_S_DIS = 1 (see Table 5)
VDD = 1.2 V
-
88
400
nA
VDD = 3.3 V
-
64
350 [4]
nA
VDD = 5.5 V
-
71
450
nA
PWRMNG[2:0] = 111 (see Table 22);
COF[2:0] = 111 (see Table 18)
TC_DIS = 0 (see Table 5); 100TH_S_DIS = 1 (see Table 5)
VDD = 1.2 V
-
101
500
nA
VDD = 3.3 V
-
70
450
nA
VDD = 5.5 V
-
76
550
nA
PWRMNG[2:0] = 111 (see Table 22);
COF[2:0] = 000 (see Table 18)
TC_DIS = 0 (see Table 5); 100TH_S_DIS = 0 (see Table 5);
VDD = 1.2 V
[5] -
460
770
nA
VDD = 3.3 V
[5] -
1035
1365
nA
VDD = 5.5 V
[5] -
1670
2135
nA
PWRMNG[2:0] = 000 (see Table 22);
COF[2:0] = 111 (see Table 18)
TC_DIS = 0 (see Table 5); 100TH_S_DIS = 0 (see Table 5)
VDD = 1.8 V, VBAT = 1.5 V
-
118
500
nA
VDD = 3.3 V, VBAT = 3.3 V
-
104
500
nA
VDD = 5.5 V, VBAT = 3.3 V
-
107
550
nA
VBAT = 1.2 V, IBAT
[6] -
104
565
nA
VBAT = 3.3 V, IBAT:
[6] -
83
450
nA
IDD
supply current [2]
VBAT = 5.5 V, IBAT:
[6] -
91
625
nA
Table 89. Static characteristics
PCF2131
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2021. All rights reserved.
Product data sheet
Rev. 1.1 — 15 October 2021
59 / 86



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