PBLS2003S_2

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 02 — 24 August 2009

4 of 16

NXP Semiconductors

PBLS2003S

20 V PNP BISS loadswitch

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.

[3]

Device mounted on a ceramic PCB, Al2O3, standard footprint.

(1) Ceramic PCB, Al2O3, standard footprint

(2) FR4 PCB, mounting pad for collector 1cm2

(3) FR4 PCB, standard footprint

Fig 1.

Power derating curves

Tamb (°C)

−75

175

125

25

75

−25

006aaa808

1.0

0.5

1.5

2.0

Ptot

(W)

0

(1)

(2)

(3)

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per device

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] -

-

180

K/W

[2] -

-

125

K/W

[3] -

-

85

K/W

TR1; PNP low VCEsat (BISS) transistor

Rth(j-sp)

thermal resistance from

junction to solder point

-

-

40

K/W