PBLS2004D datasheet(9/17 Pages) NEXPERIA

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PBLS2004D_1

Product data sheet

Rev. 01— 23 June 2005

8 of 16

Philips Semiconductors

PBLS2004D

20 V PNP BISS loadswitch

VCE = −2V

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

IC/IB =20

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Fig 5.

TR1 (PNP): DC current gain as a function of

collector current; typical values

Fig 6.

TR1 (PNP): Collector-emitter saturation voltage

as a function of collector current; typical values

VCE = −5V

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

IC/IB =20

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

Fig 7.

TR1 (PNP): Base-emitter voltage as a function

of collector current; typical values

Fig 8.

TR1 (PNP): Base-emitter saturation voltage as a

function of collector current; typical values

006aaa416

400

600

200

800

1000

hFE

IC (mA)

−10−1

−104

−103

−1

−102

−10

(1)

(2)

(3)

006aaa417

−10−1

−10−2

−1

VCEsat

(V)

−10−3

IC (mA)

−10−1

−104

−103

−1

−102

−10

(1)

(2)

(3)

006aaa418

−0.6

−0.4

−0.8

−1.0

VBE

(V)

−0.2

IC (mA)

−10−1

−104

−103

−1

−102

−10

(1)

(2)

(3)

006aaa419

−0.6

−0.8

−0.4

−1.0

−1.2

VBEsat

(V)

−0.2

IC (mA)

−10−1

−104

−103

−1

−102

−10

(1)

(2)

(3)

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