AU5790 datasheet(9/20 Pages) PHILIPS

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Philips Semiconductors

Product data

AU5790

Single wire CAN transceiver

2001 May 18

Dynamic (AC) CHARACTERISTICS for 33 kbps operation

–40

°C < Tamb < +125 °C; 5.5 V < VBAT < 16 V; –0.3 V < VTxD < 5.5 V; –0.3 V < VNSTB < 5.5 V; –0.3 V < VEN < 5.5 V; –0.3 V < VRxD < 5.5 V;

–1 V < VCANH < +16 V; bus load resistor at pin RTH: 2 kΩ < RT < 9.2 kΩ; total bus load resistance 270 Ω < RL < 9.2 kΩ;

CL < 13.7 nF; 1µs < RL ∗ CL < 4µs; RxD pull-up resistor 2.2 kΩ < Rd < 3.0 kΩ; RxD: loaded with CLR < 30pF to GND;

all voltages are referenced to pin 8 (GND); positive currents flow into the IC;

typical values reflect the approximate average value at VBAT = 13 V and Tamb = 25 °C, unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Pin CANH

VdBAMN

CANH harmonic content in

normal mode

NSTB = 5 V, EN = 5 V;

RL = 270 Ω, CL = 15 nF;

fTxD = 20 kHz, 50% duty cycle;

8 V < VBAT< 16 V;

0.53 MHz < f < 1.7 MHz, Note 2

µV

VdBAMW

CANH harmonic content in

wake-up mode

NSTB = 5 V, EN = 0 V;

RL = 270 Ω, CL = 15 nF;

fTxD = 20 kHz, 50% duty cycle;

8 V < VBAT< 16 V;

0.53 MHz < f < 1.7 MHz, Note 2

µV

Pins NSTB, EN

tNH

Normal mode to high-speed mode

delay

µs

tHN

High-speed mode to normal mode

delay

µs

tWN

Wake-up mode to normal mode

delay

8 V < VBAT < 16 V

µs

tNS

Normal mode to sleep mode delay

500

µs

tSN

Sleep mode to normal mode delay

µs

Pin TxD

tTrN

Transmit delay in normal mode,

bus rising edge

NSTB = 5 V, EN = 5 V;

RL = 270 Ω, CL = 15 nF;

5.5 V < VBAT < 27 V;

measured from the falling edge on

TxD to VCANH = 3.0 V

6.3

µs

tTfN

Transmit delay in normal mode,

bus falling edge

NSTB = 5 V, EN = 5 V;

RL = 270 Ω, CL = 15 nF;

5.5 V < VBAT< 27 V;

measured from the rising edge on

TxD to VCANH = 1.0 V

µs

tTrW

Transmit delay in wake-up mode,

bus rising edge to normal levels

NSTB = 0 V, EN = 5 V;

RL = 270 Ω, CL = 15 nF;

5.5 V < VBAT < 27 V;

measured from the falling edge on

TxD to VCANH = 3.0 V

6.3

µs

tTrW-S

Transmit delay in wake-up mode,

bus rising edge to wake-up level

NSTB = 0 V, EN = 5 V;

RL = 270 Ω, CL = 15 nF;

11.3 V < VBAT < 27 V;

measured from the falling edge on

TxD to VCANH = 8.9 V

µs

tTfW-3.6

Transmit delay in wake-up mode,

bus falling edge with 3.6

µs time

constant

NSTB = 0 V, EN = 5 V;

RL = 270 Ω, CL = 13.3 nF;

5.5 V < VBAT < 27 V;

measured from the rising edge on

TxD to VCANH = 1 V, Note 2

12.7

µs

tTfW-4.0

Transmit delay in wake-up mode,

bus falling edge with 4.0

µs time

constant

NSTB = 0 V, EN = 5 V;

RL = 270 Ω, CL = 15 nF;

5.5 V < VBAT < 27 V;

measured from the rising edge on

TxD to VCANH = 1 V

13.7

µs

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