FN3983 Rev 5.00

Page 3 of 7

April 1998

HIP2060

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Turn-On Delay Time (Note 5)

td(ON)

VDD = 30V, RL = 3

ID = 10A, VGS = 10V, RG = 50

See Figure 14

-

4

-

ns

Rise Time (Note 5)

tr

-

5

-

ns

Turn-Off Delay Time (Note 5)

td(OFF)

-

12

-

ns

Fall Time (Note 5)

tf

-6

-

ns

Total Gate Charge (Note 5)

Qg(TOT)

VDS = 50V, VGS = 10V, ID = 10A

See Figures 16 and 17

-

10.5

12.0

nC

Gate-Source Charge (Note 5)

Qgs

-

1.4

2.0

nC

Gate-Drain Charge (Note 5)

Qgd

-

4.9

5.5

nC

Short-Circuit Input Capacitance,

Common Source

CISS

VDS = 25V, VGS = 0V, f = 1MHz

-

230

-

pF

Short-Circuit Output Capacitance,

Common Source for Upper FET

COSS(U)

-

150

-

pF

Short Circuit Output Capacitance

Common Source for Lower FET

COSS(L)

-

225

-

pF

Short-Circuit Reverse Transfer

Capacitance, Common Source

CRSS

-

40

-

pF

Thermal Resistance Junction to Case

RJC

-

-

2.7

oC/W

Thermal Resistance Junction to Ambient

RJA

-

-

60

oC/W

Electrical Specifications

TC = 25oC, Unless Otherwise Specified (Continued)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source-Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

SOURCE-TO-DRAIN DIODE SPECIFICATIONS (Across Z1 and Z2)

Forward Voltage (Note 4)

VSD

ISD = 10A, VGS = 0V

-

1.05

1.25

V

Reverse Recovery Time (Across Z1)

trr(S1-D1)

ISD = 10A, dISD/dt = 100A/s

-

50

-

ns

Reverse Recovery Time (Across Z2)

trr(S2-D2)

ISD = 10A, dISD/dt = 100A/s

-

75

-

ns

SOURCE2-TO-DRAIN1 DIODE SPECIFICATIONS D (Across D1)

Forward Voltage (Note 4)

VSD

ISD = 10A, VGS = 0V

-

8.5

9.5

V

Reverse Recovery Time

trr

ISD = 10A, dISD/dt = 100A/s

-

200

-

ns

DEVICE MATCHING

Drain-Source On Resistance Match

rDS(ON)M

VGS = 10V, ID = 10A, TC = 25oC-

90

-

%

NOTES:

4. Pulse test: Pulse Width

 300s, Duty Cycle  2%.

5. Independent of operating temperature.