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HTMS8301FTB/AF Datasheet(PDF) 4 Page - NXP Semiconductors |
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HTMS8301FTB/AF Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 44 page  184430 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet PUBLIC Rev. 3.0 — 18 March 2010 184430 4 of 44 NXP Semiconductors HITAG µ ISO 18000 transponder IC 6. Pinning information Note: All pads except LA and LB are electrically disconnected after dicing. Fig 2. HITAG µ ISO 1800 - Mega bumps bondpad locations Table 2. HITAG µ ISO 18000 - Mega bumps dimensions Description Dimension (X) chip size 550 µm (Y) chip size 550 µm (1) pad center to chip edge 100.5 µm (2) pad center to chip edge 48.708 µm (3) pad center to chip edge 180.5 µm (4) pad center to chip edge 55.5 µm (5) pad center to chip edge 48.508 µm (6) pad center to chip edge 165.5 µm Bump Size: LA, LB 294 x 164 µm Remaining pads 60 x 60 µm 001aaj823 (4) (4) (3) (Y) (X) (2) (5) (6) (6) (1) (1) LA LB |
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